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hexfet power mosfet notes through are on page 8 pqfn 5x6 mm applications ? primary side synchronous rectification ? inverters for dc motors ? dc-dc brick applications ? boost converters features and benefits features benefits low rdson (< 31 m ? ) lower conduction losses low thermal resistance to pcb (<0.8c/w) increased power density 100% rg tested increased reliability low profile (<0.9 mm) results in increased power density industry-standard pinout ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs com p liant containin g no lead, no bromide and no halo g en environmentally friendlier msl1, industrial qualification increased reliability absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t mb = 25c continuous drain current, v gs @ 10v i d @ t mb = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @ t mb = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range 8.2 44 -55 to + 150 3.6 0.029 156 v w a c max. 1028 220 20 150 v ds 150 v r ds(on) max (@v gs = 10v) 31 m ? q g (typical) 36 nc r g (typical) 1.7 ? i d (@t mb = 25c) 44 a

for m quantit y IRFH5015pbf pqfn 5mm x 6mm tape and reel 4000 IRFH5015trpbf base part number package type standard pack orderable part number downloaded from: http:///
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s d g static @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units bv dss drain-to-source breakdown voltage 150 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 0.12 CCC v/c r ds(on) static drain-to-source on-resistance CCC 25.5 31 m ? v gs(th) gate threshold voltage 3.0 CCC 5.0 v ? v gs(th) gate threshold voltage coefficient CCC -12 CCC mv/c i dss drain-to-source leakage current CCC CCC 20 CCC CCC 250 i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 gfs forward transconductance 38 CCC CCC s q g total gate charge CCC 36 54 q gs1 pre-vth gate-to-source charge CCC 13 CCC q gs2 post-vth gate-to-source charge CCC 4.6 CCC q gd gate-to-drain charge CCC 11 CCC q godr gate charge overdrive CCC 7.4 CCC q sw switch char g e (q gs2 + q gd ) CCC 15.6 CCC q oss output charge CCC 14 CCC nc r g gate resistance CCC 1.7 CCC ? t d(on) turn-on delay time CCC 9.4 CCC t r rise time CCC 9.7 CCC t d(off) turn-off delay time CCC 14 CCC t f fall time CCC 3.4 CCC c iss input capacitance CCC 2300 CCC c oss output capacitance CCC 205 CCC c rss reverse transfer capacitance CCC 47 CCC avalanche characteristics parameter units e as sin g le pulse avalanche ener g y mj i ar avalanche current a diode characteristics parameter min. t y p. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 52 78 ns q rr reverse recovery charge CCC 550 825 nc t on forward turn-on time time is dominated by parasitic inductance mosfet symbol na ns a pf nc v ds = 75v CCC v gs = 20v v gs = -20v CCC CCC 220 CCC CCC 56 conditions v gs = 0v, i d = 250ua reference to 25c, i d = 1.0ma v gs = 10v, i d = 34a conditions max. 230 34 ? = 1.0mhz t j = 25c, i f = 34a, v dd = 75v di/dt = 500a/s t j = 25c, i s = 34a, v gs = 0v showing the integral reverse p-n junction diode. CCC r g =1.3 ? v ds = 50v, i d = 34a v ds = 150v, v gs = 0v, t j = 125c a i d = 34a i d = 34a v gs = 0v v ds = 50v v ds = v gs , i d = 150a v gs = 10v t y p. v ds = 150v, v gs = 0v v ds = 16v, v gs = 0v v dd = 75v, v gs = 10v thermal resistance parameter typ. max. units r jc-mb junction-to-mounting base 0.5 0.8 r jc (top) junction-to-case CCC 15 c/w r ja junction-to-ambient CCC 35 r ja (<10s) junction-to-ambient CCC 22 downloaded from: http:///
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fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 9.0v 8.0v 7.0v 6.0v 5.5v bottom 5.0v 60s pulse width tj = 25c 5.0v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v 60s pulse width tj = 150c vgs top 15v 10v 9.0v 8.0v 7.0v 6.0v 5.5v bottom 5.0v 2 4 6 8 10 12 14 16 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 50v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 34a v gs = 10v 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 1 02 03 04 05 0 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 120v v ds = 75v v ds = 30v i d = 34a downloaded from: http:///
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fig 11. maximum effective transient thermal impedance, junction-to-mounting base fig 8. maximum safe operating area fig 9. maximum drain current vs. case temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 150a i d = 250a i d = 1.0ma i d = 1.0a 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc downloaded from: http:///
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fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 v gs, gate -to -source voltage (v) 10 20 30 40 50 60 70 80 90 100 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 34a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 800 900 1000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 3.7a 7.9a bottom 34a fig 14. typical avalanche current vs. pulsewidth 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse) downloaded from: http:///
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fig 15. !" !# $%&' for n-channel hexfet power mosfets fig 18a. gate charge test circuit fig 18b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 16b. unclamped inductive waveforms fig 16a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 17a. switching time test circuit fig 17b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
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? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period (
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) pqfn 5x6 outline "b" package details note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn 5x6 outline "b" part marking xxxx xywwx xxxxx international rectifier logo part number (4 or 5 digits) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) !"#$ %& ' &(())) ('# ( (# $% * '+ !"#,& ' &(())) ('# ( (# , downloaded from: http:///
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* qualification standards can be found at international rectifiers web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.41mh, r g = 25 ? , i as = 34a. pulse width 400s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level industrial ?? (per je dec jes d47f ??? guidelines ) pqfn 5x6 outline "b" tape and reel

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